Merged H-MOVPE GaN Deposition System
Principal Investigator: Dr. Tim Anderson
Is
a hybrid MOCVD/hydride vapor phase epitaxy (H-MOVPE, merged-hydride)
reactor that was built and has the capability of growing by MOCVD or
HVPE. MOCVD growth uses the customary chemistry of TMGa and NH3 to
deposit GaN. However, the HVPE chemistry is slightly different as the
conventional Ga source of liquid gallium is replaced with TMGa. GaCl is
still formed by between HCl and the Ga source. The reaction that is
isolated upstream from the NH3 line is
Ga(CH3)3(g) + HCl(g) -> GaCl(g) + 3CH4(g)
Theoretically, there should be no carbon contamination from the group
III source on account of all the methyl radicals are instantly converted
to methane gas. As in conventional HVPE, the GaCl stream is then mixed
with the NH3 stream and passed over the substrate located in the hot
growth zone.
GaCl(g) + NH3(g) -> GaN(s) + HCl(g) + H2(g)
The advantages of this design include: MOCVD or HVPE in the same
reactor, in-situ cleaning, improved NH3 cracking, rapid reactant
switching, and HVPE deposition with low background impurities and high
growth rates. This design allows an initial smooth MOCVD film to provide
a template for thick HVPE growth.
For more information, contact
Dr. Tim Anderson: (352)
392-0882
http://www.che.ufl.edu/faculty/anderson/index.html
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